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不纯的硅体,是由石英砂在电弧炉中与焦炭反应还原而制得,铁是硅体中主要的杂质,如果去铁,则需把硅体与盐酸反应,生成三氯氢硅,然后将三氯氢硅经过精馏提纯,再将提纯过的三氯氢硅,在硅棒上于1000℃以上的高温下,用氢气还原;即可得出较纯的多晶硅;再将多品硅于石英坩埚内高温熔融,加入定向籽晶,在单晶炉上旋转而慢慢地向上拉晶,在此过程中,多晶硅固化成单晶.通常在拉单晶前,掺杂其他元素,会使单晶具有一定的导电性.下面以硅材料为例,说明其掺杂机理.
Impure silicon, quartz sand by the reaction in the electric arc furnace and coke obtained by reduction, iron is the main impurity in the silicon body, if you go to iron, you need to silicon body and hydrochloric acid reaction to generate trichlorosilane, Then, trichlorosilane is purified by rectification, and the purified trichlorosilane is reduced with hydrogen at a high temperature above 1000 DEG C on a silicon rod to obtain relatively pure polycrystalline silicon; Silicon melts at a high temperature in a quartz crucible, is added with oriented seed crystals, and rotates slowly and upwardly on the single crystal furnace during which polysilicon is solidified into a single crystal, usually doping with other elements before pulling the single crystal, Will make a single crystal has a certain conductivity.The following silicon material, for example, explain the doping mechanism.