本文是用X射线衍射增宽效应,对CVD多晶硅层中晶粒大小进行分析测定的.CVD多晶硅在生长过程中,往往引入宏观和微观形变,由傅里叶级数表示法分离开晶粒大小增宽和晶格形变增宽,从而取得平均晶粒大小的准确值,与未经修正值比较约差20％以上.我们并用此方法对离子注入样品的不同时间退火的多晶硅晶粒大小进行了研究. In this paper, X-ray diffraction broadening effect on the CVD polysilicon layer grain size analysis and determination.CVD polysilicon in the growth process, often the introduction of macro and micro deformation, the Fourier series representation to separate the grain size Broadening and lattice broadening, so as to obtain the exact value of the average grain size, which is about 20% less than the uncorrected value.We also used this method for the different time annealed polycrystalline silicon grain size the study.