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利用DCArcPlasmaJetCVD法制备搀杂氮的金刚石厚膜。研究了在反应气体CH4 /Ar/H2 中加入N2 对金刚石膜显微组织和力学性能的影响。在固定H2 、Ar、CH4 流量的情况下改变N2 的流量 ,即反应气体中氮原子和碳原子的变化比例 (N/C比 ,范围从 0 0 6～ 0 6 8) ,同时在固定的腔体压力 (4kPa)和衬底温度 (80 0℃ )下进行金刚石膜生长。用扫描电镜 (SEM )观察金刚石膜形貌、用X射线衍射表征晶体取向 ,用三点弯曲的方法来测量金刚石膜的断裂强度。结果表明 ,氮气在反应气体中的大量加入 ,对直流等离子体喷射制备金刚石膜的显微组织和力学性能有显著的影响。
Preparation of nitrogen-doped diamond thick film by DCArcPlasmaJetCVD method. The effect of adding N2 to the reaction gas CH4 / Ar / H2 on the microstructure and mechanical properties of diamond films was investigated. The flow rate of N2, that is, the ratio of change of nitrogen atom and carbon atom in the reaction gas (N / C ratio, ranging from 0 0 6 to 0 6 8) while changing the flow rates of H 2, Ar and CH 4, Diamond film growth was performed at bulk pressure (4 kPa) and substrate temperature (80 ° C). The morphology of diamond films was observed by scanning electron microscopy (SEM), the crystal orientation was characterized by X-ray diffraction, and the rupture strength of diamond films was measured by three-point bending method. The results show that the large amount of nitrogen added in the reaction gas has a significant effect on the microstructure and mechanical properties of diamond films prepared by DC plasma jet.