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本文采用一种结构为Ag/MoO_3/Ag的金属/氧化物/金属(M_1/O/M_2)叠层替代ITO作为OLED器件的阳极,研究Ag/MoO_3/Ag叠层结构变化对于OLED器件电极透过率、亮度、光谱等性能的影响。实验采用真空蒸镀方法制备了一系列器件,器件结构为Ag/MoO_3/Ag/MoO_3(10nm)/NPB(40nm)/Alq_3(60nm)/LiF(1nm)/Al(150nm)。对比器件的电压-电流密度、电压-亮度、光谱特性等数据,表明Ag/MoO_3/Ag的结构为20/20/10(nm)时,器件性能较好。在驱动电压为11V时,其亮度达到18 421cd/m~2,电流效率为2.45cd/A;且因器件中存在微腔效应,其EL光谱蓝移,半高宽变窄。但考虑到530nm处其电极透过率仅为17%,所以经换算该器件实际发光亮度比ITO电极器件更高。该Ag/MoO_3/Ag叠层阳极制作相对简单,经优化后在顶发射和柔性OLED器件方面将具有一定的应用前景。
In this paper, a metal / oxide / metal (M_1 / O / M_2) stack with Ag / MoO_3 / Ag instead of ITO was used as the anode of an OLED device. The effect of the Ag / MoO_3 / Over rate, brightness, spectral and other performance effects. A series of devices were fabricated by vacuum evaporation. The structure of the device was Ag / MoO_3 / Ag / MoO_3 (10nm) / NPB (40nm) / Alq_3 (60nm) / LiF (1nm) / Al (150nm). Comparing the voltage-current density, voltage-brightness and spectral characteristics of the device, it shows that the device performance is better when the structure of Ag / MoO_3 / Ag is 20/20/10 nm. When the driving voltage is 11V, the brightness reaches 18 421 cd / m ~ 2 and the current efficiency is 2.45 cd / A. Because of the microcavity effect in the device, the EL spectrum is blue shifted and the FWHM is narrowed. However, considering that the electrode transmittance at 530 nm is only 17%, the actual luminance of the device after conversion is higher than that of the ITO electrode device. The Ag / MoO_3 / Ag laminated anode is relatively simple to fabricate and has certain application prospects in top emission and flexible OLED devices.