论文部分内容阅读
设计了一种基于体硅加工技术的单敏感质量元差分电容式二维加速度传感器,并采用硅-玻璃静电键合、ICP工艺释放等技术完成了二维加速度传感器的加工。测试结果表明:该二维加速度传感器两个检测方向上的灵敏度基本一致,线性度较好,交叉干扰较小。X、Y方向的灵敏度分别为58.3 mV/gn、55.6 mV/gn;线性相关系数分别为0.9968、0.9961,交叉灵敏度分别为6.17%、7.82%。
A two-dimensional acceleration sensor based on bulk silicon processing technology is designed and fabricated. The two-dimensional acceleration sensor is fabricated by silicon-glass electrostatic bonding and ICP technology. The test results show that the sensitivity of the two-dimensional acceleration sensor in the two detection directions is basically the same, the linearity is good, and the cross interference is small. The sensitivities in X and Y directions were 58.3 mV / gn and 55.6 mV / gn, respectively. The linear correlation coefficients were 0.9968 and 0.9961 respectively, and the cross sensitivity was 6.17% and 7.82% respectively.