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用分子束外延方法在ＧａＡｓ上生长ＩｎＳｂ薄膜。方法是先在温度３８０℃生长ＩｎＳｂ有源层。然后低温（３００℃）生长一层约０．０３μｍ厚的ＩｎＳｂ缓冲层。Ｓｂ＿４与Ｉｎ的束流等效压强比为４：１时，可获得温度７７Ｋ最大霍尔迁移率的材料。在２～５μｍ厚度的薄膜中，温度７７Ｋ的霍尔迁移率大于３５０００ｃｍ￣２Ｖ￣（－１）·ｓ￣（－１）和Ｘ射线半峰宽小于２５０（″）。温度７７Ｋ的霍尔迁移率比最近报导的结果大３倍。Ｘ射线半峰宽也相对小。对可改进薄膜性能的几种可能性作了探讨。
InSb Thin Films Grown on GaAs by Molecular Beam Epitaxy. The method is to grow the InSb active layer at a temperature of 380 ° C. Then a layer of InSb buffer layer about 0.03 μm thick was grown at low temperature (300 ° C). When the equivalent pressure ratio of Sb_4 and In beam is 4: 1, the material with the maximum Hall mobility of 77K can be obtained. In the films of 2 ~ 5μm thickness, the Hall mobility at 77K is greater than 35000cm ~ 2V ~ (-1) · s ~ (-1) and the X-ray half width is less than 250 The rate is three times greater than the recently reported results and the X-ray half width is also relatively small. Several possibilities for improving the properties of the films are discussed.