论文部分内容阅读
为建立类金刚石膜材料仿真模型,采用PECVD法在石英及硅衬底沉积出适用于功率半导体器件钝化的类金刚石膜,借助光谱吸收法测量其禁带宽度,结合材料电特性、能带结构及其与衬底的相互作用,将材料在Silvaco ATLAS器件仿真系统中重现。结果表明,材料模型的电特性仿真数据与实验数据相关性达0.9以上。该仿真模型可应用于优化类金刚石膜钝化工艺,研究类金刚石膜材料掺杂特性。
In order to establish the simulation model of diamond-like carbon (DLC) film, a diamond-like carbon film suitable for passivation of power semiconductor devices was deposited on quartz and silicon substrate by PECVD method. The band gap of the DLC film was measured by spectral absorption spectroscopy. And their interaction with the substrate, the material is reproduced in the Silvaco ATLAS device simulation system. The results show that the electrical characteristics of the material model simulation data and experimental data correlation of more than 0.9. The simulation model can be applied to optimize the passivation of diamond-like carbon films to study the doping characteristics of diamond-like carbon films.