论文部分内容阅读
研制了 4 H - Si C热氧化生长氧化层埋沟 n MOSFET.用室温下 N离子注入的方法形成埋沟区和源漏区 ,然后在 16 0 0℃进行激活退火 .离子注入所得到的埋沟区深度大约为 0 .2μm .从转移特性提取出来的峰值场效应迁移率约为 18.1cm2 /(V· s) .造成低场效应迁移率的主要因素可能是粗糙的器件表面 (器件表面布满密密麻麻的小坑 ) .3μm和 5μm器件的阈值电压分别为 1.73V和 1.72 V.3μm器件饱和跨导约为 10 2μS(VG=2 0 V ,VD=10 V )
The buried MOSFET and the source / drain regions were grown by N + ion implantation at room temperature and then annealed at 16000 C. The buried The depth of the ditch region is about 0.2 μm. The peak field-effect mobility derived from the transfer characteristics is about 18.1 cm 2 / (V · s). The main factor contributing to the low field-effect mobility may be the roughness of the device surface (3) The threshold voltages for the 3μm and 5μm devices are 1.73V and 1.72V, respectively. The saturation transconductance of a 3μm device is about 102μS (VG = 20V, VD = 10V)