一、引言七十年代初,硅电荷耦合器件(Si—CCD)研制成功,引起了人们的极大兴趣,Si—CCD已成功地被用于可见光成象。为了满足高级红外系统的需要,红外探测器的研制者自然会想到把CCD的概念用于红外探测器的研究上。为此,进行了广泛的研究。目前已有两种类型的红外电荷耦合器件取得了进展。这两种红外CCD是单片式和混合式。混合式红外CCD已接近解决系统应用中所提出的问题,单片式除研究掺杂型红外CCD外,人们正对工作温度比较高的 I. INTRODUCTION In the early 1970s, Si-CCD was successfully developed and attracted great interest. Si-CCD has been successfully used in visible light imaging. In order to meet the needs of advanced infrared systems, the researchers of infrared detectors will naturally think of the concept of CCD for infrared detectors. To this end, conducted extensive research. There have been two types of infrared charge-coupled devices have made progress. The two infrared CCDs are monolithic and hybrid. Hybrid infrared CCD has been approaching the system to solve the problems raised in the application of monolithic addition to the study of doped infrared CCD, people are working relatively high temperature