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本文是一篇Ⅱ-Ⅵ族化合物注入式发光的情况报告。对用于注入式发光器件的已知的和潜在的材料作了简要的评论,并对Ⅱ-Ⅵ族化合物与其它材料的优缺点进行了对照比较。接着讨论了Ⅱ-Ⅵ族化合物的一般特性,这些特性直接影响注入式发光器件的性能,包括:施主和受主的溶解度、补偿现象、以及缺陷中心的本质。在讨论用来获得注入式发光的各种结构时,对其中两例做了比较详细的描述,一是p-n结型器件,一是单一导电类型器件。估价了以Ⅱ-Ⅵ族化合物制作注入式发光器件的前途,其中涉及到我们的知识不足的一些方面,这些方面应当作为进一步研究的焦点。
This article is a case report of the II-VI compound implanted luminescence. Known and potential materials for injection-type light-emitting devices are briefly reviewed, and comparisons of the advantages and disadvantages of II-VI compounds with other materials are made. Next, the general properties of II-VI compounds are discussed. These properties directly affect the performance of the implanted light-emitting device. These include the donor and acceptor solubility, compensation phenomena, and the nature of the defect center. In discussing the various structures used to obtain implanted luminescence, two of these cases are described in more detail. The first is a p-n junction device and the other is a single conductivity type device. The future of injection-type light-emitting devices made of Ⅱ-Ⅵ compounds has been evaluated, and some aspects of our under-knowledge are involved. These aspects should be the focus of further research.