在N2 气压为 2 6 7× 10 -2 Pa ,5 0 0℃的条件下 ,用MBE方法在GaAs(0 0 1)衬底上生长了InN的外延层。生长期间 ,In流量以 3× 10 14 到 2 4× 10 14 atoms/cm2 ·s范围内变化。用X 射线衍射 (XRD)和反射高能电子衍射 (RHEED)法对InN膜进行了表征。发现在生长的初始阶段 ,所生长的InN属立方相 ,但随着外延层厚度的增加出现了InN层由立方相向六角相的相变。X 射线倒易空间图形测量表明的在GaAs(0 0 1)衬底上生长的六角相InN其c 轴主要沿GaAs的〈111〉B方向取向 An epitaxial layer of InN was grown on a GaAs (0 0 1) substrate by the MBE method under a N2 pressure of 267 × 10 -2 Pa at 500 ℃. During growth, the In flow rate varied from 3 × 10 14 to 2 4 × 10 14 atoms / cm 2 · s. InN films were characterized by X-ray diffraction (XRD) and reflection high-energy electron diffraction (RHEED). It is found that in the initial stage of growth, the grown InN belongs to the cubic phase, but with the increase of the epitaxial layer thickness, the phase transformation of the InN layer from the cubic phase to the hexagonal phase occurs. X-ray reciprocal space pattern measurements indicate hexagonal InN grown on a GaAs (001) substrate whose c-axis is predominantly oriented in the <111> B direction of GaAs