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研究了磁控溅射法制备的ZnO薄膜晶体管(TFT)。以NH3处理的热生长SiO2作为绝缘层,控制好Ar-O2比等条件溅射合适厚度的ZnO作为器件的有源层。实验表明,与普通条件下热生长的SiO2绝缘层硅片相比,NH3处理的高性能SiO2绝缘层Si片器件的载流子迁移率至少要高1个数量级以上;溅射条件在Ar-O2比25∶1情况下制作的器件性能最好;ZnO薄膜厚度也对ZnO-TFT性能有很大的影响。实验中,采用了4种膜厚,测试表明,其中25nm厚的ZnO薄膜迁移率最大。
The ZnO thin film transistor (TFT) prepared by magnetron sputtering was studied. NH3-treated thermal growth SiO2 is used as an insulating layer to control the Ar-O2 ratio and other conditions to sputter a suitable thickness of ZnO as the active layer of the device. The experimental results show that the carrier mobility of NH3-treated high-performance SiO2 insulating devices is at least one order of magnitude higher than that of the thermally grown SiO2 insulating wafers under normal conditions. The sputtering conditions are as follows: Ar-O2 The performance of the fabricated device is best than the 25: 1 case; the ZnO film thickness also has a great influence on the performance of ZnO-TFT. Four kinds of film thickness were used in the experiment. The results show that the mobility of ZnO film with 25nm thickness is the largest.