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垂重多重结半导体器件(VMJ)有良好的近红外光电特性。本文报道了垂直多重结器件的制作工艺及其红外光谱响应的测量结果,同时对该器件的红外谱响应作了分析,并挺出了进一步改进方案.
Vertical multiple junction semiconductor device (VMJ) has good near-infrared photoelectric properties. In this paper, the fabrication process of vertical multi-junction devices and the measurement results of their infrared spectral response are reported. Meanwhile, the infrared spectral response of the device is analyzed, and further improvement programs are out.