论文部分内容阅读
采用TSMC 0.18μm CMOS工艺库,设计并验证了一种应用于3.1~10.6GHz频段的超宽带低噪声放大器。该放大器分为两级:采用跨导增强技术的共栅结构作为输入级,实现了输入阻抗匹配,提高了增益并降低了噪声;第二级是放大输出级,由两个共源放大管和源跟随器缓冲管构成,并采用两级电流复用配置将它们连接在一起,不但对信号进行了二次放大,降低了功耗,而且实现了输出匹配。仿真结果表明,在3.1~10.6GHz频带范围内,放大器增益为14.8dB,增益平坦度为!0.6dB,噪声系数介于2.9~4.5dB,输入和输出的回波损耗均优于-11dB,1dB压缩点为-20.8dBm,在1.8V电压下,静态功耗仅为8.99mW。
Using TSMC 0.18μm CMOS technology library, an ultra-wideband LNA with a frequency band of 3.1 ~ 10.6GHz has been designed and verified. The amplifier is divided into two levels: the transconductance enhancement technology common-gate structure as the input stage, to achieve the input impedance matching to improve the gain and reduce the noise; the second stage is to amplify the output stage, by the two common source amplifier and The source follower buffer is made up of two current recombination configurations that connect them together, amplifying the signal for the second time, reducing power consumption and achieving output matching. The simulation results show that the gain of the amplifier is 14.8dB, the gain flatness is 0.6dB, the noise figure is 2.9 ~ 4.5dB, the return loss of the input and output is better than-11dB and 1dB in the frequency range of 3.1 ~ 10.6GHz. The compression point is -20.8dBm and the quiescent power consumption is only 8.99mW at 1.8V.