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随着有源器件从电子管向晶体管的过渡,电路可以在低电压下工作。零件和部件的小型化、高密度化将广泛地遇到散热问题。最近,电子设备系统的逐渐复杂,要求它更小型化和高速度化,于是超高密度的集成电路便应运而生。一方面,在汽车和工业机器中出现了超过150℃高温环境下的使用要求,再是对音频功率集成电路逐渐强烈地提出了高功率化的要求。不仅在耐热性较好的硅半导体的使用中,而且随着包含有耐热性较差的各种无源元件的混合集成电路和功能块的要求,集成电路管壳中热设计逐渐成为复杂又而重要的问题。
As the active device transitions from the tube to the transistor, the circuit can operate at low voltages. Parts and components of the miniaturization, high density will be widely encountered thermal issues. Recently, the complexity of electronic equipment systems has required the miniaturization and speed-up of ultra-high-density integrated circuits. On the one hand, in the automotive and industrial machinery appeared over 150 ℃ high temperature environment, the use of requirements, and then the audio power integrated circuits are strongly proposed high-power requirements. Not only in the use of a heat-resistant silicon semiconductor but also in the design of a hybrid integrated circuit and a functional block containing various passive components having poor heat resistance, thermal design in an integrated-circuit package is becoming complicated Another important issue.