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利用ＺｎＯ微晶粉末以化学电泳法成功地在导电玻璃上制备了不同ｘ值的紫外发光的宽禁带氧化物半导体三元化合物ＭｇｘＺｎ１－ｘＯ薄膜．电子显微镜和Ｘ射线衍射研究显示,薄膜由ＭｇｘＺｎ１－ｘＯ微晶组成,薄膜中微晶大小的分散度比ＺｎＯ粉末有所减小,并更具择优取向的趋势．室温下光致发光测量给出,ＭｇｘＺｎ１－ｘＯ薄膜在小于３８０ｎｍ的紫外波段出现较强的半宽小于２０ｎｍ的激子性发光峰,而且带边峰的半宽以及带边峰与杂质缺陷峰强度之比均较原始的ＺｎＯ粉末有明显改善,表明这种ＭｇｘＺｎ１－ｘＯ薄膜具有优良的紫外发光特性．
Using ZnO microcrystal powder by chemical electrophoresis successfully prepared on the conductive glass with different x values of UV-emitting wide band gap oxide semiconductor ternary compound MgxZn1-xO film. Electron microscopy and X-ray diffraction studies show that the film consists of MgxZn1-xO crystallites, the dispersion of crystallite size in the film is smaller than the ZnO powder, and more preferred orientation. Photoluminescence measurements at room temperature show that MgxZn1-xO films exhibit strong half-width exciton emission spectra less than 20 nm in the UV range of less than 380 nm and the half-width of the band edge and peak intensities of band edge and impurity defects Than the original ZnO powder has significantly improved, indicating that this MgxZn1-xO film has excellent UV luminescence properties.