在Si引入深能级杂质Au,可以用来制作高灵敏感温元件。Au在Si中具有双重能级,其固溶度低,分凝系数很小,易发生非活性沉淀,又有较大的扩散系数,材料性能与浅杂质同Au的复合比密切相关。本文综合考虑以上特点,用直拉法制备了两种电导类型的掺金硅。文中叙述了P型掺金硅的两种方法:(1)次第掺杂法。即在掺硼硅中掺金;(2)在含极量n型杂质的Si中掺Au,利用高复合比而显示Au的施主能级。用后一方法获得了整根单晶的电阻率和B值均匀的晶体。n型掺金硅的质量,取决于对挥发性P的控制。利用Au的饱和固溶度和高的扩散系数特点,利用一定工艺措施,制取特性均匀的n型掺金硅。文中给出了两种电导类型直拉掺金硅的杂质激活能、以及材料的热敏特性测量结果。杂 The introduction of deep-level impurity Au into Si can be used to make highly sensitive temperature components. Au has a double energy level in Si, its solid solubility is low, the segregation coefficient is small, prone to non-active precipitation, and a larger diffusion coefficient, the material properties and the shallow impurities with the Au composite ratio is closely related. In this paper, we consider the above characteristics, using Czochralski method of conductivity of the two types of gold-doped silicon. The paper describes two types of P-doped silicon: (1) the second doping method. That is, doping with boron-doped silicon; (2) doping Au with a large amount of n-type impurities in Si, and using high recombination ratio to show the donor level of Au. The latter method was used to obtain a single crystal with uniform resistivity and B value. The quality of n-type gold-doped silicon depends on the control of volatile P. Utilizing the characteristics of saturated solute solubility and high diffusion coefficient of Au, n-type gold-doped silicon with uniform properties was prepared by a certain process measures. In this paper, the impurity activation energies of two kinds of conductivity type czochralski silicon are given, as well as the measurement results of the thermal characteristics of the material. miscellaneous