注:MOS(金属氧化物半导体),RAM(随机存取存储器) 最近几年,设计人员曾预言,MOS BAM很快代替磁心存储器。尽管有这些预言和最新的高密度P─—沟道硅门MOS RAM在速度和消耗在同样有储片上的功耗胜过磁心存储值,计算机系统仍很少在它们的主存储器中使用这些RAMS。主要原因是:(1)P─—构道动态MOS RAMS都需要复杂的同步计时和控制线路。把它们合并到具有OPUS(中央处理装置)的计算机系统中,由于所有OPUS已经设计成用磁心,所以需要重新设计大量的逻辑系统。加之,由于计算机逻辑比它的存储器是大大多花钱的,所以重新设计逻辑系统比经济观 Note: MOS (Metal Oxide Semiconductor), RAM (Random Access Memory) In recent years, designers have predicted that MOS BAM will soon replace core memory. Despite these predictions and the recent high-density P-channel silicon MOS MOS RAMs that outperform magnetic memory at speeds and consume the same amount of power as stored on a memory chip, computer systems still rarely use these RAMS in their main memory . The main reasons are as follows: (1) P─- Structure Dynamic MOS RAMS requires complex synchronous timing and control circuits. Merging them into a computer system with OPUS (Central Processing Unit) requires a large number of logic systems to be redesigned because all OPUS have been designed with a magnetic core. In addition, since computer logic is much more expensive than its memory, redesigning logical systems over economic ones