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研究了22 nm栅长的异质栅MOSFET的特性,利用工艺与器件仿真软件Silvaco,模拟了异质栅MOSFET的阈值电压、亚阈值特性、沟道表面电场及表面势等特性,并与传统的同质栅MOSFET进行比较。分析结果表明,由于异质栅MOSFET的栅极由两种不同功函数的材料组成,因而在两种材料界面附近的表面沟道中增加了一个电场峰值,相应地漏端电场比同质栅MOSFET有所降低,所以在提高沟道载流子输运效率的同时也降低了小尺寸器件的热载流子效应。此外,由于该器件靠近源极的区域对于漏压的变化具有屏蔽作用,从而有效抑制了小尺寸器件的沟道长度调制效应,但是由于其亚阈值特性与同质栅MOSFET相比较差,导致漏致势垒降低效应(DIBL)没有明显改善。
The characteristics of a 22 nm gate-length hetero-gate MOSFET are investigated. The characteristics of threshold voltage, subthreshold characteristics, channel surface electric field and surface potential of a hetero gate MOSFET are modeled using the process and device simulation software Silvaco. Homogeneous gate MOSFETs are compared. The results show that the gate of hetero-gate MOSFET is composed of two materials with different work functions, so an electric field peak is added to the surface channel near the interface between two materials. Correspondingly, Reduce, so to improve the channel carrier transport efficiency while also reducing the hot carrier effect of small size devices. In addition, since the device near the source region has a shielding effect on the variation of the drain voltage, thereby effectively suppressing the channel length modulation effect of the small-sized device, its sub-threshold characteristics are inferior compared with the homo-gate MOSFET, There is no significant improvement in DIBL.