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高电子迁移率晶体管(HEMT)采用调制掺杂提高沟道中的载流子迁移率。在初期的AlGaAs/GaAsHEMT结构中,肖特基栅通过n+-AlGaAs施主层控制(调制)供给沟道的载流子的数量。载流子被限制在GaAs层中的势阱内,形成一个二维电子气(2DEG)。未掺杂的AlGaAs隔离层把n+-AlGaAs层中的离化施主
High Electron Mobility Transistors (HEMTs) use modulation doping to increase carrier mobility in the channel. In the initial AlGaAs / GaAsHEMT structure, the Schottky barrier controls (modulates) the number of carriers supplied to the channel through the n + -AlGaAs donor layer. The carriers are confined in the potential well in the GaAs layer to form a two-dimensional electron gas (2DEG). The undoped AlGaAs layer isolates the donor in the n + -AlGaAs layer