本工作提出了一种利用液氮获得55°K绝对温度的简单方法,不需改装原设备,更不必增加昂贵设备.在此温度下测定了掺硼P型硅半导体材料的杂质补偿度,样品受单一能级控制时,结果与77°K弱场磁阻法完全一致,显示了本法的实际价值. In this work, a simple method of obtaining the absolute temperature of 55 ° K using liquid nitrogen has been proposed without modifying the original equipment and without adding expensive equipment. The impurity compensation degree of the boron-doped P-type silicon semiconductor material was measured at this temperature, When controlled by a single energy level, the result is completely consistent with that of the 77 ° K field weakening method, which shows the actual value of this method.