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无热处理制备了红光CdSe/ZnS量子点掺杂PVK的ITO/PVK:QDs/Alq3/Al结构电致发光器件.测试器件的发光光谱和电学特性等,研究了掺杂浓度(质量分数)对体系发光特性的影响,将非掺杂与掺杂体系做了比较,提出了优化掺杂体系的一些可行方案.量子点掺杂浓度较低时,主要为Alq3的发光;掺杂浓度为20%时,Alq3的发光得到抑制,红光发射最佳;继续增大掺杂浓度,QDs发光峰发生微弱红移,器件性能变差.与非掺杂体系相比,掺杂浓度合适的PVK:QDs体系大大提高了器件的稳定性.
The structure of ITO / PVK: QDs / Alq3 / Al structure electroluminescent device doped with red CdSe / ZnS quantum dots PVK was prepared by the non-thermal treatment. The emission spectra and electrical properties of QDs / Alq3 / The comparison of non-doping and doping systems suggests some feasible schemes to optimize the doping system.When the quantum dot doping concentration is low, the main emission is Alq3, and the doping concentration is 20% , The emission of Alq3 is inhibited and the red emission is the best.When the doping concentration continues to increase, the QDs luminescence peaks are slightly red-shifted and the performance of the device deteriorates.Compared with non-doped system, the doping concentration of PVK: QDs The system greatly improves the stability of the device.