本文报告一种叫做自保护MOS栅晶闸管的新器件 .这种器件无寄生闩锁效应 ,并在较高阳极电压下展现出电流下降而不是饱和或上升的特性 .因此 ,这种新器件具有令人满意的正偏安全工作区 .器件的保护点由用户外接输入电阻自行调节 ,极大增加了使用的灵活性 .此外 ,器件保护点电流和电压的温度系数均为负 ,这种特性使器件在高温工作时可更好地起自保护作用 This article reports a new device called a self-protecting MOS gate thyristor that has no parasitic latch-up and exhibits a current drop rather than saturation or rise at higher anode voltages. People are satisfied with the positive partial safety work area.The protection point of the device is adjusted by the external input resistance of the user, which greatly increases the flexibility of use.In addition, the temperature coefficient of current and voltage of the device protection point is negative, this feature makes the device Works better at high temperature since protection