在Huybrechts关于强耦合极化子的模型基础上,采用LLP变分法研究了极性晶体中激子与IO声子强耦合、与LO声子弱耦合体系的基态能量,推导出了激子的自陷能和诱生势的表达式,并以AgCl/AgBr晶体为例进行了数值计算,结果表明,激子的自陷能不仅与激子的坐标z有关,而且电子-空穴间距离ρ对激子自陷能的影响也十分显著;激子的诱生势不仅与电子-空穴间距离ρ有关,而且激子距离晶体界面的位置z对诱生势的影响也十分显著。 Based on the Huybrechts model of the strongly coupled polaron, LLP variational method was used to study the ground-state energies of the strong coupling between the exciton and the IO phonon in the polar crystal and the weak coupling with the LO phonon, and the exciton’s The results show that the trapping energy of excitons is not only related to the z coordinate of the exciton, but also the distance between electron and hole ρ The effect of exciton’s entrapment potential is not only related to the electron-to-hole distance ρ, but also the location of the exciton-to-crystal interface z on the induced potential is also very significant.