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射频磁控溅射法室温下在Pt Ti SiO2 Si上制备非晶Pb(Zr0 4 8Ti0 52 )O3薄膜 ,非晶PZT薄膜分别经常规炉退火(CFA)处理和快速热退火 (RTA)处理晶化为 (10 0 ) ,(111)不同择优取向的多晶薄膜 .采用x射线衍射测定了薄膜相组分、择优取向度 ;用原子力显微镜和压电响应力显微镜观察了薄膜表面形貌 ,以及对应区域由自发极化形成的铁电畴像 ,观察了不同取向薄膜的电畴分布特征 .结果表明 ,RTA晶化过程钙钛矿结构PZT结晶主要以PZT Pt界面处的PtPb化合物为成核点异质形核并类似外延的结晶生长 ,沿界面结晶速率远大于垂直膜面结晶速率 ,而CFA晶化样品成核发生在膜内杂质缺陷处 ,以同质成核为主 .不同的成核机理导致了不同晶面择优取向生长 .
The amorphous Pb (Zr0 4 8Ti0 52) O3 thin films were prepared by RF magnetron sputtering on Pt Ti SiO2 Si at room temperature. The amorphous PZT thin films were crystallized by conventional furnace annealing (CFA) and rapid thermal annealing (RTA) (100), (111) polycrystalline thin films with different preferential orientation.The phase composition and preferred orientation of the films were measured by X-ray diffraction (XRD). The morphology of the films was observed by atomic force microscopy and piezoelectric force microscopy. The results show that the PZT crystals of perovskite structure mainly consist of PtPb compound at PZT Pt interface as nucleation point The nucleation and nucleation similar to epitaxy grow along the interface, and the crystallization rate along the interface is much larger than that of the vertical film. The nucleation of CFA crystallized in the defect of the film and dominated by homogeneous nucleation. Different nucleation mechanisms Lead to different crystal orientation preferred growth.