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本文讨论电子和表面光学声子耦合强、与体纵光学声子耦合弱时对ＣｄＦ２半导体表面磁极化子性质的影响．采用线性组合算符法和微扰法导出了ＣｄＦ２半导体中表面磁极化子的有效哈密顿量．在计及电子在反冲效应中发射和吸收不同波矢的声子之间的相互作用时，讨论了对ＣｄＦ２半导体中表面磁极化子性质的的影响．对ＣｄＦ２半导体进行数值计算，结果表明，ＣｄＦ２半导体中表面磁极化子的振动频率λ和诱生势Ｖｉｓ随坐标ｚ的增加而减小，随磁场Ｂ的增加而增加；诱生势Ｖｉｂ随坐标ｚ的增加而增加，但与外磁场Ｂ无关；有效势Ｖｅｆ随坐标ｚ和磁场Ｂ的增加而增加；当ｚ＜３ｎｍ时，声子之间相互作用的影响Δ随坐标ｚ的增加而增加，当ｚ＞３ｎｍ时，Δ随ｚ的增加而缓慢减小．
In this paper, we discuss the influence of strong phonon coupling between surface and electron on the properties of magnetopolaron on CdF2 semiconductor surface. The effective combinatorial operator method and perturbation method are used to derive the effective Hamiltonian of surface magnetopolaron in CdF2 semiconductor. When considering the interaction between electrons that emit and absorb phonons of different wave vectors in the recoil effect, the effects on surface magnetopolaron properties in CdF2 semiconductors are discussed. The numerical calculations of CdF2 semiconductors show that the vibrational frequency λ and the induced potential Vis of the surface magnetopolaron in the CdF2 semiconductor decrease with the increase of the coordinate z and increase with the increase of the magnetic field B. The induced potential Vib varies with the coordinate z , But not with the external magnetic field B; the effective potential Vef increases with the increase of the coordinate z and the magnetic field B; when z <3 nm, the influence Δ of the interaction between phonons increases with the increase of the coordinate z When z> 3nm, Δ decreases slowly with the increase of z.