美国无线电公司有人用化学蒸汽淀积法镀掺锑的氧化锡透明导电薄膜。用双醋酸锡二丁酯、五氯化锑、O_2、H_2O和N_2为运载气体,衬底温度350～500℃。SnO_2中Sb的最佳掺杂浓度是0.6％(克原子百分比)。薄膜的厚度在0.1～0.2微米范围内。膜中不含挥发的氯原子,在1000℃的空气中稳定。对可见光的透射率在80％以上。面电阻率是 Some people at the U.S. radio company used chemical vapor deposition to coat an antimony-doped tin oxide transparent conductive film. Using dibutyltin acetate, antimony pentachloride, O_2, H_2O and N_2 as carrier gas, the substrate temperature is 350 ~ 500 ℃. The optimal doping concentration of Sb in SnO 2 is 0.6% (atomic percent). The thickness of the film is in the range of 0.1-0.2 microns. The film does not contain volatile chlorine atoms, in the air at 1000 ℃ stable. The visible light transmittance of 80% or more. Surface resistivity is