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《IEEE EDL》1992年9月份报道了9态谐振隧道二极管的研制。由于在多态存储器、AD变换、多值逻辑和神经网络等方面均需用多峰谐振隧道器件,因此,它有较广泛的用途。目前,态数目最多的器件是5态谐振隧道二极管(RTD)。因态数目受到不掺杂双势垒结构积累串联电阻的限制,且该电阻又导致RTD伏安特性的滞后现象。美国TI公司通过结构工艺的改进及采用场效应管作负载,使器件态的数目增至9个。
IEEE EDL reported the development of a 9-state resonant tunneling diode in September 1992. Due to the multi-modal resonant tunneling devices needed in polymorphic memories, AD transforms, multi-valued logic and neural networks, it has a wider range of uses. Currently, the most state-of-the-art devices are 5-state resonant tunneling diodes (RTDs). The number of states is limited by the accumulated series resistance of the undoped double-barrier structure, and this resistance in turn causes a hysteresis in the volt-ampere characteristics of the RTD. American TI Company through the structural process improvement and the use of FET as the load, the number of device states increased to 9.