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首先论述了Al GaN/GaN高电子迁移率晶体管(HEMT)在微波大功率领域的应用优势和潜力;其次,介绍并分析了影响Al GaN/GaN HEMT性能的主要参数,分析表明要提高Al-GaN/GaN HEMT的频率和功率性能,需改善寄生电阻、电容、栅长和击穿电压等参数。然后,着重从材料结构和器件工艺的角度阐述了近年来Al GaN/GaN HEMT的研究进展,详细归纳了目前主要的材料生长和器件制作工艺,可以看出基本的工艺思路是尽量提高材料二维电子气的浓度和材料对二维电子气的限制能力的同时减小器件的寄生电容和电阻,增强栅极对沟道的控制能力。另外,根据具体情况调节栅长及沟道电场。最后,简要探讨了Al GaN/GaN HEMT还存在的问题以及面临的挑战。
Firstly, the advantages and potentialities of AlGaN / GaN high electron mobility transistor (HEMT) in microwave high power are discussed. Secondly, the main parameters influencing the performance of AlGaN / GaN HEMT are introduced and analyzed. / GaN HEMT frequency and power performance, need to improve parasitic resistance, capacitance, gate length and breakdown voltage and other parameters. Then, the research progress of AlGaN / GaN HEMT in recent years has been elaborated from the point of view of material structure and device technology. The current main material growth and device fabrication process are summarized in detail. It can be seen that the basic process idea is to maximize the two- The concentration of the electron gas and the ability of the material to confine the two-dimensional electron gas reduce the parasitic capacitance and resistance of the device and enhance the gate control ability of the channel. In addition, according to the specific circumstances to adjust the gate length and channel electric field. Finally, the problems and challenges of Al GaN / GaN HEMT are briefly discussed.