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用现有的红外法测量的GaN基HEMT器件结温,比实际最高温度点的温度低。而用喇曼法测量结温对设备要求高且不易于操作。针对现有技术对GaN基HEMT器件结温的测量存在一定困难的问题,设计了一款HEMT器件匹配电路。利用红外热像仪测量HEMT器件的结温升高,并结合物理数值模拟仿真,提出一种小尺寸栅极结温升高测量方法。结果表明,建立正确的仿真模型,可以得到不同栅极长度范围内的温度。通过这种方法可以测量出更接近实际的结温,为之后研究加载功率与壳温对Al GaN/GaN HEMT器件热阻的影响奠定了理论基础,并且为实际工作中热特性研究提供了参考依据。
The junction temperature of the GaN-based HEMT device measured by the existing infrared method is lower than the actual highest temperature point. The Raman method to measure the junction temperature of the high equipment requirements and not easy to operate. Aiming at the problem that the junction temperature of GaN-based HEMT device has some difficulties in the prior art, a matching circuit of HEMT device is designed. Using the thermal imaging camera to measure the junction temperature of HEMT device, combined with the physical simulation, a method for measuring the junction temperature rise of a small size gate is proposed. The results show that the correct simulation model can be obtained within the range of different gate length temperature. By this method, the junction temperature closer to the actual value can be measured, which lays a theoretical foundation for studying the influence of the loading power and the shell temperature on the thermal resistance of the AlGaN / GaN HEMT device, and provides a reference for the study of thermal characteristics in practical work .