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利用脉冲恢复技术测量了有限宽基区n+-on-p光电二极管中的少子寿命.实验发现,反向恢复时间同正、反向电流的大小有关.从恢复时间ts与IF/IR函数关系提取的少子寿命随着基区厚度与少子扩散长度比值降低而明显增大.在77 K时,采用传统方法脉冲回复技术提取的少子寿命为28 ns,而当考虑短基区效应时,所提取的少子寿命为51 ns.这表明HgCdTe光电二极管的基区厚度与少子扩散长度比值是采用脉冲恢复技术测量少子寿命技术中的一个重要参数.只有当基区厚度大于三倍少子扩散长度时,传统方法中无限基区厚度的假设条件才成立.
The lifetime of minority carriers in n + -on-p photodiode with finite width was measured by pulse recovery technique. It was found that the reverse recovery time was related to the magnitude of forward and reverse current. The relationship between recovery time ts and IF / IR function Of young children’s life expectancy increases with the decrease of the ratio of base thickness to the number of young children.With 77 K, the traditional method of pulse-recovery is used to extract the minority-lifetime of 28 ns, while when considering the short base effect, The minority lifetime is 51 ns, indicating that the ratio of base thickness to minority carrier diffusion length for HgCdTe photodiodes is an important parameter in pulse subtraction-based techniques for the measurement of low-minority lifetime techniques. Only when the base thickness is greater than three times less than the minority diffusion length, The assumption of infinite base thickness is valid.