Compared with the traditional image intensifier with phosphor screen readout, the photon-counting imaging detector with ......

采用热丝CVD法在单晶Si衬底上进行了Si和Ge薄膜的低温外延生长,用XRD和Raman谱对其结构性能进行了分析。结果表明：在衬底温度200℃......

利用电子束蒸发方法在双面抛光的ZnSe基底上镀制单层Ge薄膜.在80 K300 K温度范围内,采用PerkinElmer Frontier傅里叶变换红外光谱......