现用于集成电路(IC)成品率预报及故障分析的缺陷模型均是用圆或正方形来代替真实缺陷的复杂轮廓进行近似建模的,从而在模型中引入......

Irradiation-induced atomic-scale defects and lattice disorder in Silicon Carbide(SiC) can significantly affect the mater......