In this paper,secondary impact ionization(2II)induced degradation in 0.18μm channel length NMOSFETS is investigated by ......

基于绝缘体上硅技术,提出并研制动态阈值nMOSFETs结构.阐述了动态阈值nMOSFETs的工作原理.动态阈值nMOSFETs的阈值电压从VBS=0V时......