【摘 要】
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We report some recent progresses made in Shandong University on improving the light emission efficiency (LEE) of both GaN and AlGaInP light emitting diodes
【机 构】
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State Key Laboratory of Crystal Materials, Shandong University, China
【出 处】
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The 6th International Conference on Nanoscience and Technolo
论文部分内容阅读
We report some recent progresses made in Shandong University on improving the light emission efficiency (LEE) of both GaN and AlGaInP light emitting diodes (LEDs). We first show the microstructural aspects of both LEDs. Then, we show some new techniques developed on fabricating novel optical radiation patterns (ORPs) on LEDs. These techniques include 1) porous ORPs fabricated by plasmonic catalysis, 2) ITO nanorods fabricated on GaN LEDs by e-beam evaporation, 3) roughened p-GaN by direct pulsed UV laser writing, 4) composite ZnO ORPs composed of both microscale and nanoscale substructures, and 5) pyramidal patterns on AlGaInP LEDs by laser induced photochemical etchings.
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