【摘 要】
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Raman spectroscopy is an integral part of graphene research [1]. It is used to determine the number and orientation of layers, the quality and types of edge
【机 构】
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Cambridge Graphene Centre, University of Cambridge,Cambridge, CB3 OFA, UK
【出 处】
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The 6th International Conference on Nanoscience and Technolo
论文部分内容阅读
Raman spectroscopy is an integral part of graphene research [1]. It is used to determine the number and orientation of layers, the quality and types of edges, and the effects of perturbations, such as electric and magnetic fields, strain, doping, disorder and functional groups[2,3]. I will review the state of the art, future directions and open questions in Raman spectroscopy of graphene and related materials, focussing on the effect of disorder[3,4], doping[5,6] and deep UV laser excitation[7]. I will then consider the shear [8] and layer breathing modes(LBMs)[9], due to relative motions of the planes, either perpendicular or parallel to their normal.
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