Real-Time Dose Monitoring System by Sensing Implanter Current and Biased Pulse Voltage in Plasma Sou

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户:IDYLL123
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To measure ion dose in plasma source ion implantation (PSII) is very important for monitoring processing reliability and repeatability.
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