Due to the existence of interface Schottky barriers and depolarization electric field,ferroelectric films sandwiched between electrodes are strongly expected to be used as a new kind of solar cells.However,the photocurrent with a typical order of A/cm2 is too low to be practical.Here we demonstrate that the insertion of a n-type cuprous oxide (Cu2O) layer between the Pb(Zr,Ti)O3 (PZT) film and the cathode Pt contact in a ITO/PZT/Pt cell leads to the short-circuit photocurrent increasing 120-fold to 4.8 mA/cm2 and power conversion efficiency increasing of 72-fold to 0.57％ under AM1.5G (100 mW/cm2) illumination.