PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION ULTRALOW DIELECTRIC CONSTANT FILMS USING TRIETHOXYMETHYLSI

来源 :2016年上海市研究生学术论坛——电子科学与技术 | 被引量 : 0次 | 上传用户：jyin_studio

【摘要】

：

　　Ultralow dielectric-constant (κ) porous SiCO(H) films were prepared using C7H18O3Si (MTES) and C 10H16 (LIMO) precursors by plasma enhanced chemical vapor

【作者】

：

Zi-JunDing;Shi-JinDing;WeiZhang;

【机构】

：

School of Microelectronics, Fudan University, Shanghai 200433, CHINA

【出处】

：

2016年上海市研究生学术论坛——电子科学与技术

【发表日期】

：

2016年期

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　　Ultralow dielectric-constant (κ) porous SiCO(H) films were prepared using C7H18O3Si (MTES) and C 10H16 (LIMO) precursors by plasma enhanced chemical vapor deposition (PECVD) and post-deposition annealing.This paper well demonstrated the effect of LIMO/MTES flow rate ratio on the performance of the SiCO(H) film.When the flow rate ratio was 1.5, the SiCO(H) films exhibited the lowest κ value of 2.2 and extremely low leakage current density of 5.3×l0-9A/cm2 at 1 MV/cm, Young's modulus of 4.23 GPa, and hardness of 0.55 GPa after annealing at 420℃ for 4 h in N2 ambient.

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PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION ULTRALOW DIELECTRIC CONSTANT FILMS USING TRIETHOXYMETHYLSI

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