东芝公司研制成功1兆位动态随机存取存贮器,芯片面积为4.78×13.23毫米,集成了225万个晶体管和电容器,结构为1,048,576字×1位,双列直插式封装.该器件采用了埋入氧化物隔离方法,存贮器单元为5×6.4微米,这有助于在每个单元写入或读出时稳定而无误差地工作.工作功耗为270毫瓦,响应时 Toshiba has successfully developed a 1-Mbit dynamic random access memory with a chip area of ​​4.78 × 13.23 mm, an integrated 2.25 million transistors and capacitors, the structure of 1,048,576 words × 1 bit, dual in-line package. The device uses For a buried oxide isolation method, the memory cell size is 5x6.4 microns, which helps to work stably and error-free at the time of writing or reading of each cell. The operating power consumption is 270 milliwatts,