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对GaAs基半导体激光器真空解理钝化工艺进行了研究,发现在高真空条件下解理和钝化GaAs基半导体激光器能有效减少激光器腔面缺陷,从而抑制非辐射复合。通过测试光致发光(PL)谱线和X射线光电子能谱(XPS)发现,经过超高真空解理钝化的GaAs基半导体激光器bar条的光致发光特性比没有经过真空解理钝化获得比较大的提升,并且bar条表面污染率有很大改观。对真空解理钝化工艺的钝化膜的厚度进行了优化。
The vacuum cleavage passivation process of GaAs-based semiconductor laser was studied. It was found that cleavage and passivation of GaAs-based semiconductor laser under high vacuum conditions can effectively reduce laser cavity surface defects and thus suppress non-radiative recombination. The photoluminescence (PL) spectra and X-ray photoelectron spectroscopy (XPS) of GaAs-based semiconductor laser bar after cleavage by ultra-high vacuum cleavage were compared with that of the bar without passivation of vacuum cleavage Larger upgrade, and bar surface contamination rate has greatly improved. The thickness of passivation film in vacuum cleavage passivation process was optimized.