以单电子隧穿器件为代表的纳电子器件研究是当前人们关注的热点话题。由于所涉及到的结构尺寸非常小(通常为十数个纳米甚至几个纳米),现行微加工技术根本无法满足要求,因此,发展纳米尺度的结构加工技术是开展此类研究的关键。通常有两个思路:一个是“自上而下”的传统加工方法,如缩短光的波长,利用深紫外光、X 光、电子束和离子束等:另一个是“自下而上”的组装方法,从原子、分 The research on nanoelectronic devices represented by single electron tunneling devices is a hot issue that people are currently concerned about. Due to the very small size of the structures involved (usually a few tens of nanometers or even a few nanometers), the current micromachining technology simply can not meet the requirements, so the development of nano-scale structural processing technology is the key to such research. There are usually two ideas: one is “top-down” traditional processing methods such as shortening the wavelength of light, using deep ultraviolet light, X-rays, electron beams and ion beams, etc. The other is “bottom-up” Assembly method, from the atom, points