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本文介绍了用CVD方法分别在Si和InP上淀积了Al_2O_3膜.并用椭偏仪、高频C-V,准静态C-V、DLTS对Al_2O_3膜的性质及其与Si和InP的界面性质进行了测试分析.
In this paper, the Al 2 O 3 films deposited on Si and InP by CVD were introduced respectively, and the properties of Al 2 O 3 films and their interfacial properties with Si and InP were analyzed by ellipsometry, high frequency CV, quasi-static CV and DLTS .