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现在,以半导体集成电路为代表的微电子元件所用的微细图形,是由以照相技术和化学腐蚀为中心的工艺完成的。但是,化学腐蚀具有如下的问题:(1)最近,由于图形向微细化发展,既使已用到此项极限技术,要进行十分良好的腐蚀也还是相当困难的。(2)工艺带来了腐蚀表面的氧化、表面对水分的吸附、侧向腐蚀等现象,这些都是使用水溶液腐蚀剂所不可避免的本质困难。(3)药品的水溶液将发生公害。干式腐蚀技术,能够解决以上问题,它是一种利用离子轰击构成的溅射腐蚀和活性
Now, micro-electronic components represented by semiconductor integrated circuits used by the micro-graphics, and is based on photographic techniques and chemical corrosion-centered process to complete. However, chemical etching has the following problems: (1) Recently, due to the development of the miniaturization of the figure, it is still quite difficult to perform very good corrosion even if this limit technique has been used. (2) The process brings about the oxidation of the corrosion surface, the adsorption of water on the surface, and the lateral corrosion. All of these are the inevitable essential difficulties of using the aqueous solution etchant. (3) Aqueous solutions of medicines will be polluted. Dry-etching technology, to solve the above problems, it is a sputtering ion formed by ion bombardment corrosion and activity