论文部分内容阅读
用正电子湮没寿命谱研究了塑性形变P型砷化镓中的缺陷性质．样品原始载流子浓度为2．63X10~18cm-3．形变量分别为2．5％，5％，7．5％，10％和15％．室温正电子寿命测量结果显示，形变样品中有新的空位型缺陷产生，鉴定为空位团．根据塑性形变样品中空位团的正电子捕获率的大小和寿命谱温度关系初步判断：在P型GaAs中，塑性形变产生的空位团的荷电性为正．正电子寿命温度实验显示，在低温下形变样品中还存在正电子浅捕获态．浅捕获中心很可能是锌代位杂质和镓反位缺陷．
Positron annihilation lifetime spectra were used to investigate the defect properties in plastic deformation of p-type gallium arsenide. The original sample carrier concentration of 2.63X10 ~ 18cm-3. Deformation variables were 2.5%, 5%, 7.5%, 10% and 15% respectively. Positron lifetime measurements at room temperature showed that new vacancy-type defects were present in the deformed samples and were identified as vacancy clusters. According to the relationship between the size of positron catalysis and the lifetime spectrum temperature of vacancy clusters in plastic deformation samples, we first determine the chargeability of vacancy clusters generated by plastic deformation in P-type GaAs. Positron lifetime temperature experiments show that there is also a shallow positive positron capture state in the deformed samples at low temperatures. Shallow trapping centers are most likely zinc-substituted impurities and gallium anti-defects.