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本专利是关于红外探测器件的制造方法。该方法的特点是:靠外延法在高电阻率的半导体衬底上外延一层作为红外探测器材料的多元半导体晶体。然后,有选择性地腐蚀该外延晶体层,腐蚀到上述衬底为止。以未被腐蚀的外延晶体层作为探测器件。采用本发明提供的这种新的制造方法,容易形成厚度薄、均匀性好的多元半导体薄片,因此也就容易制造出性能稳定的、合格率高的列阵红外探测器。参照工艺流程图详细说明本发明的工艺流程。图1～图4是用本发明的制造方法制造列阵红外探测器件的工艺流程截面图和平面图。如图1所示,先用众所周知的滑动液相
This patent is about the manufacture of infrared detection device. The method is characterized in that epitaxial growth is performed on the high-resistivity semiconductor substrate by a epitaxial method to form a plurality of semiconductor crystals as the material of the infrared detector. Then, the epitaxial crystal layer is selectively etched and etched to the above substrate. An unetched epitaxial crystal layer is used as a detection device. With the new manufacturing method provided by the present invention, a thin and uniform multi-layered semiconductor thin film is easily formed, and therefore, an array infrared detector with stable performance and high pass rate can be easily manufactured. The process flow of the present invention is described in detail with reference to the process flow chart. 1 to FIG. 4 are cross-sectional views and plan views of a process flow for manufacturing the arrayed infrared detecting device by the manufacturing method of the present invention. Shown in Figure 1, first with the well-known sliding liquid