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In this paper, the 2DEG (or 2DHG) density-electric field expression is introduced based on the analysis in energy-band diagram of HIGFETs and the triangular well approximation. In combinating GSW velocity field equation, the analytic formulas of the static characteristics, such as ID-VD, IDS-VDS, gm.,gD, CG and fT are obtained for n- of p- channel HIGFETs at low field region. In the meantime, using the effective variable channel length model, the analytic formulas of the static characteristicc at high field region are also achieved. According to these formulas, the effect of the device structure parameters (such as channel length, etc.) or device electric parameters( such as drain or source resistance, etc.) on the static characteristics can be easily found. And the optimum simulation of device is able to be carried out, which will effectively promote the development of the device manufacture. The theoretical calculated results are in good agreement with the experimental data published in literatures.
In this paper, the 2DEG (or 2DHG) density-electric field expression is introduced based on the analysis in energy-band diagram of HIGFETs and the triangular well approximation. In combinating GSW velocity field equation, the analytic formulas of the static characteristics, such as ID-VD, IDS-VDS, gm., gD, CG and fT are obtained for n- of p-channel HIGFETs at low field region. In the meantime, using the effective variable channel length model, the analytic formulas of the static characteristicc at high field region are also achieved. According to these formulas, the effect of the device structure parameters (such as channel length, etc.) or device electric parameters (such as drain or source resistance, etc.) on the static characteristics can And the optimum simulation of device is able to be carried out, which will substantially promote the development of the device manufacture. The theoretical calculations results are in good agreement with the experimental data published in literatures.