在亚微米 IC器件的铝金属化工艺中 ,采用了阻挡层和硅化物后 ,发现随着铝淀积温度的升高 ,铝的阶梯覆盖率有所提高 .为克服高温淀积带来的问题 ,采用了两步的冷 /热铝溅射和浸润层等工艺代替原来的铝溅射 .通过研究和一系列的比较实验 ,发现影响铝填充性能的主要因素为 :热铝淀积温度、热铝淀积功率、Ti浸润层厚度及冷热铝厚度比 .由此得到了适合于实际亚微米 IC器件生产的金属化工艺优化条件 In the sub-micron IC device aluminum metallization process, the use of the barrier layer and the silicide, it was found that with the aluminum deposition temperature increases, the aluminum step coverage has increased to overcome the problems caused by high temperature deposition , A two-step cold / hot aluminum sputtering and wetting process was adopted to replace the original sputtering of aluminum.According to the research and a series of comparative experiments, it was found that the main factors affecting the aluminum filling performance are: hot aluminum deposition temperature, heat The deposition power of aluminum, the thickness of Ti wetting layer and the thickness ratio of hot and cold aluminum, the optimum conditions of metallization suitable for the actual production of submicron IC devices