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本文探讨了高频小功率VMOSFE T的设计考虑,并且介绍了f_m=300MHz;I_(cm)=20~50mA;g_m=5000μ(?);BV_(SD)≥20V VMOSFE T的设计及研制情况.
In this paper, the design considerations of high frequency and low power VMOSFE T are discussed, and the design and development of VMOSFE T with f_m = 300MHz, I_ (cm) = 20 ~ 50mA, g_m = 5000μ (?) And BV_ (SD)