高质量硅量子细线日本松下电器公司采用目前的ＶＬＳＩ技术研制成功高质量硅量子细线，线宽１０ｎｍ，为实现脑细胞规模集成化迈出了第一步。该公司的硅量子细线采用如下步骤形成：首先，在硅材料上腐蚀出一个凸字形，凸字形顶部宽度４００ｎｍ，并由腐蚀膜保护；其次，在... High-quality silicon quantum wire Japan Matsushita Electric Co., Ltd. using the current VLSI technology developed high-quality silicon quantum wire thin, line width 10nm, in order to achieve the integration of brain cells has taken the first step in the scale. The company’s silicon quantum wire is formed using the following steps: First, the corrosion of a silicon material on the convex, convex top width of 400nm, and protected by the corrosion film;